Fabrication of thin-film transistor based on self-assembled single-walled carbon nanotube network

摘要

Thin-film transistor based on controllable electrostatic self-assembled monolayer single-wall carbon nanotubes (SWNTs) network has been fabricated by varying the density of nanotubes on the silicon substrate. The densities of SWNTs network have been investigated as a function of concentration and assembly time. It has been observed that the density of SWNTs network increases from 0.6 mu m(-2) to 2.1 mu m(-2), as the average on-state current (1) increases from 0.5 mA to 1.47 mA. The device has a current on/off ratio (l(on)/I-off) of 1.3 x 10(4) when I-on reaches to 1.34 mA. (C) 2015 Elsevier B.V. All rights reserved.