首页> 外文期刊>Physica, E. Low-dimensional systems & nanostructures >Systematic reduction of the permanent exciton dipole for charged excitons in individual self-assembled InGaAs quantum dots
【24h】

Systematic reduction of the permanent exciton dipole for charged excitons in individual self-assembled InGaAs quantum dots

机译:系统地还原单个自组装InGaAs量子点中带电激子的永久激子偶极子

获取原文
获取原文并翻译 | 示例
获取外文期刊封面目录资料

摘要

The nature of the few particle wavefunctions for neutral and positively charged excitons is probed in individual InGaAs quantum dots using Stark-effect perturbation spectroscopy. A systematic reduction of the vertical component of the permanent excitonic dipole (p(z)) is observed as additional holes are added to the dot. A comparison with calculations reveals that this reduction (Deltap(z)/e similar to 15-20%) is accompanied by a significant lateral expansion of the hole ( similar to 2 nm) and contraction (similar to 1 nm) of the electron wavefunctions. We suggest that this lateral redistribution of the charged exciton wavefunctions provides an optical means to probe the lateral composition profile of the dot. (C) 2003 Elsevier B.V. All rights reserved.
机译:使用Stark效应摄动光谱法在单个InGaAs量子点中探究了中性和带正电激子的少数粒子波函数的性质。观察到永久性激子偶极子的垂直分量(p(z))的系统减小,因为向该点添加了其他孔。与计算的比较表明,这种减小(Deltap(z)/ e类似于15-20%)伴随着空穴的显着横向扩展(类似于2 nm)和电子波函数的收缩(类似于1 nm)。 。我们建议带电的激子波函数的这种横向重新分布提供了一种探测点的横向组成轮廓的光学手段。 (C)2003 Elsevier B.V.保留所有权利。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号