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首页> 外文期刊>Physica, C. Superconductivity and its applications >Diamagnetic transition of Bi2223/Ag tapes: the role of low-number stacks of superconducting layers
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Diamagnetic transition of Bi2223/Ag tapes: the role of low-number stacks of superconducting layers

机译:Bi2223 / Ag带的反磁性转变:超导层的低层堆叠的作用

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A new interpretation of the diamagnetic transition in Bi2223/Ag tapes is proposed. The main distinction from the previous models is the proper treatment of the role of low-number stacks of unit-cells. The new arguments to the existence of these stacks are given. The onset temperature of the real AC susceptibility chi' is interpreted as the melting temperature of the thickest stack. The middle temperature of chi'(T) transition and the peak temperature of the imaginary part define the melting temperature of dominant stacks. The pinning and the critical current behavior are re-analyzed in connection with the appearance of low-number stacks and the suppression of interstack Josephson interaction. (C) 1998 Elsevier Science B.V. [References: 28]
机译:提出了Bi2223 / Ag带中反磁性跃迁的新解释。与以前的模型的主要区别是正确处理了单元电池的低层堆栈的作用。给出了有关这些堆栈存在的新参数。实际AC磁化率chi'的开始温度被解释为最厚电池堆的熔化温度。 chi'(T)转变的中间温度和虚部的峰值温度确定了主堆的熔化温度。结合低数量堆栈的出现和堆栈间约瑟夫森相互作用的抑制,重新分析了钉扎和临界电流行为。 (C)1998 Elsevier Science B.V. [参考:28]

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