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Influence of hot carrier dynamics on pulse propagation in semiconductor lasers

机译:热载流子动力学对半导体激光器中脉冲传播的影响

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摘要

We time resolve the dynamic response of InGaAsP quantum-well semiconductor diode lasers after injection of a femtosecond pulse, using ultrafast upconversion. The injection of a single off-resonant pulse leads to a very fast generation of picosecond 'dark pulses', which then generate bright pulses again, leading to dark-pulse-bright-pulse oscillations with a change-over period of 500 ps. We suggest that nonlinear gain compression causes these oscillations.
机译:我们使用超快速上变频解决了飞秒脉冲注入后InGaAsP量子阱半导体二极管激光器的动态响应。注入单个失谐脉冲会导致非常快的皮秒“暗脉冲”生成,然后又生成亮脉冲,从而导致转换周期为500 ps的暗脉冲-亮脉冲振荡。我们建议非线性增益压缩会导致这些振荡。

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