Photoluminescence studies of heavily doped CuInTe2 crystals

摘要

The photoluminescence spectra of heavily doped CuInTe2 and their dependence on the temperature and excitation power were measured. At I OK an asymmetric broad peak at 0.98eV was observed. The PL peak position did not depend on the excitation power, but had a characteristic dependence on the sample temperature. Our computer simulations proved that this behaviour is in good compliance with the Shklovskij/Efros model of heavily doped semiconductors with spatially varying potential fluctuations. Therefore, the PL band was attributed to the band-to-impurity type recombination and the corresponding level to the single acceptor at 70 meV, which is most probably caused by copper vacancy. (C) 2003 Elsevier B.V. All rights reserved. [References: 15]