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Magnetoresistance of an insulating amorphous nickel-silicon film in large magnetic fields

机译:绝缘非晶态镍硅薄膜在大磁场中的磁阻

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摘要

High magnetic field measurements for the magnetoresistance ratios R(B,T)/R(0,T) have been made on an insulating amorphous nickel-silicon thin film. In zero field, the resistance of this insulating film exhibits a "soft gap" variable-range hopping law in the liquid helium temperature region. In small fields, negative magnetoresistance values are observed, which can be explained using the forward interference (orbital momentum) theory. In intermediate and large fields, the magnetoresistance is positive and large and can be explained using the wave function shrinkage theory. A phenomenological model incorporating both processes gives very acceptable fits to the experimental data. (C) 2001 Elsevier Science B.V. All rights reserved. [References: 13]
机译:已经在绝缘的非晶态镍-硅薄膜上进行了磁阻比R(B,T)/ R(0,T)的高磁场测量。在零场下,该绝缘膜的电阻在液氦温度区域表现出“软间隙”可变范围跳变定律。在小场中,观察到负磁阻值,这可以使用正向干涉(轨道动量)理论来解释。在大中场,磁阻为正且大,可以用波函数收缩理论来解释。结合这两个过程的现象学模型对实验数据给出了非常可接受的拟合。 (C)2001 Elsevier Science B.V.保留所有权利。 [参考:13]

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