Stimulated Brillouin scattering in a magnetoactive III-V semiconductor: effects of carrier heating

摘要

Following a hydrodynamic model of semiconductor plasmas, the influence of carrier heating on stimulated Brillouin scattering has been analytically studied in a magnetised one-component centrosymmetric semiconductor viz. n-InSb. The carrier heating by the intense pump modifies the electron collision frequency and hence the nonlinearity of the medium which in turn reduces the steady state and transient gain of the scattered Brillouin mode. The presence of a strong magnetic field in the transverse direction not only considerably reduces the effects of carrier heating but also lowers the Brillouin threshold and enhances the gain parameters. The results of the present investigation strongly suggest that the incorporation of carrier heating by the pump in the analysis leads to a better understanding of stimulated processes in solid and gaseous plasmas. It also helps considerably in filling the existing gap between theory and experiments. As usual, the Brillouin gain is found to be maximising when the generated acoustic wave suffers no dispersion in the medium. The rise in pump intensity leads to an enhancement of the transient gain, and spreads the range of pulse duration over which transient effects become noticeable. (C) 2002 Elsevier Science B.V. All rights reserved. [References: 18]