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首页> 外文期刊>Physica status solidi, B. Basic research >Transport properties of hydrogen-doped (Zr(80)3d(20))(1-x)H-x (3d=Co, Ni) metallic glasses
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Transport properties of hydrogen-doped (Zr(80)3d(20))(1-x)H-x (3d=Co, Ni) metallic glasses

机译:氢掺杂(Zr(80)3d(20))(1-x)H-x(3d = Co,Ni)金属玻璃的传输性能

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摘要

The electrical resistivities of hydrogen-doped (Zr(80)3d(20))(1-x)H-x (3d = Ni, Co; x less than or equal to 0.11) metallic glasses have been measured at temperatures between 2 K and 110 K and in magnetic fields up to 1 T for various dopant concentrations. These systems have a high room-temperature resistivity (rho > 160 muOmega cm) and become superconducting below 4 K. The increase of the room-temperature resistivity and its temperature coefficient with hydrogen dopant concentration is explained as due to an increase of disorder with hydrogen-doping. The temperature and magnetic field dependence of the resistivity has been analysed using theoretical models of weak-localisation and electron-electron interaction in disordered conductors. The hydrogen dopant is found to reduce the effective electron diffusion constant, D, the spin-orbit scattering rate, tau(so)(-1), the superconducting transition temperature, T-c, and broadens the superconducting transition region. The contribution of the Maki-Thompson interaction to the magnetoresistivity is also reduced. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA. Weinheim.
机译:已在2 K和110之间的温度下测量了掺杂氢的(Zr(80)3d(20))(1-x)Hx(3d = Ni,Co; x小于或等于0.11)金属玻璃的电阻率各种掺杂物浓度下,K以及在高达1 T的磁场中。这些系统具有较高的室温电阻率(rho> 160μOmegacm),并在低于4 K时变得超导。室温电阻率及其温度系数随氢掺杂剂浓度的增加被解释为是由于氢的无序度增加所致。 -掺杂。电阻率的温度和磁场依赖性已经使用无序导体中的弱局部化和电子-电子相互作用的理论模型进行了分析。发现氢掺杂剂降低了有效电子扩散常数D,自旋轨道散射速率tau(so)(-1),超导转变温度T-c,并扩大了超导转变区域。 Maki-Thompson相互作用对磁阻的贡献也减小了。 (C)2004 WILEY-VCH Verlag GmbH&Co. KGaA。温海姆。

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