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首页> 外文期刊>Physica status solidi, B. Basic research >Quantum critical transition from Kondo insulator to metallic state studied by band-structure calculations for doped compounds: CeRhSb and CeNiSn
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Quantum critical transition from Kondo insulator to metallic state studied by band-structure calculations for doped compounds: CeRhSb and CeNiSn

机译:通过能带结构计算掺杂化合物CeRhSb和CeNiSn研究了从近藤绝缘子到金属态的量子临界转变

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We present the ab initio calculations of the on-site hybridization between Ce 4f and Ce 5d electrons as well as the Mulliken Ce 5d occupation for the doped Kondo insulators CeRhSb and CeNiSn. In our investigations we have examined the following series: CeRhSb_(1-x)Sn_x, CeRh_(1-x)Pd_xSb, CeRhSb_(1-x)Te_x, Ce_(1-x)La_xRhSb and CeNi_(1-x)Cu_xSn, CeNiSn_(1-x)Sb_xSb, Ce_(1-x)La_xNiSn. The transition from the Kondo insulator to the metallic state induced by doping at some critical concentration x_c was recently reported for various dopants based on the resistivity, susceptibility and spectroscopic data. Our calculations show that both the Mulliken occupation of Ce 5d states and the onsite hybridization between Ce 4f and Ce 5d states exhibit critical behavior at nearly the same dopant concentrations as observed in experiment. We also note that for the CeRhSb-based alloys the disorder is not necessary to explain their critical behavior, in contrast to the CeNiSn-based series.
机译:我们介绍了掺杂的近藤绝缘子CeRhSb和CeNiSn的Ce 4f和Ce 5d电子之间的现场杂交以及Mulliken Ce 5d占据的从头算的计算。在调查中,我们检查了以下序列:CeRhSb_(1-x)Sn_x,CeRh_(1-x)Pd_xSb,CeRhSb_(1-x)Te_x,Ce_(1-x)La_xRhSb和CeNi_(1-x)Cu_xSn, CeNiSn_(1-x)Sb_xSb,Ce_(1-x)La_xNiSn。基于电阻率,磁化率和光谱数据,最近报道了各种掺杂剂从近藤绝缘子到金属态的转变,这些转变是通过在某些临界浓度x_c掺杂引起的。我们的计算表明,Ce 5d态的Mulliken占据以及Ce 4f和Ce 5d态之间的现场杂交在与实验中观察到的几乎相同的掺杂剂浓度下均表现出临界行为。我们还注意到,与基于CeNiSn的系列相比,对于基于CeRhSb的合金而言,无序是没有必要解释其临界行为的。

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