Hydrogen passivation of the Si-Ga donor in GaP

摘要

In LEC-grown Gap doped with silicon, two vibrational absorption lines are measured at 2175.1 and 2190.3 cm(-1) (T = 7 K). These lines are due to P-H stretching modes where hydrogen passivates Si-Ga donors. Uniaxial stress experiments show that the P-H-Si-Ga complex responsible for the 2175.1 cm(-1) line has trigonal symmetry and is the isolated passivated Si-Ga. The complex creating the 2190.3 cm(-1) line has the symmetry C-s and contains additionally a B-Ga with the four constituents located in an {110} mirror plane. Therefore, also the structure of the group-IV donor-hydrogen complexes is in Gap different from that observed in GaAs. [References: 14]