Conductivity via impurities in low-doped uncompensated silicon

摘要

It was found that in low-doped silicon crystals (2 x 10(16) < N < 10(17) cm(-3)) with compensation rate decrease (10(-5) < K < 10(-2)) the experimental results differ from the theoretical ones. At low electric fields (E) this concerns the values of the activation energy (epsilon(3)) and the dependence of epsilon(3) on N and K. The results are explained by the influence of neutral impurity interaction on the density of states. With increasing E a previously unknown conductivity (sigma(M)) appears. The dependence of sigma(M) on N, K, E, magnetic field (H), and temperature (7) is quite different from the dependence that is usual for sigma(3) conductivity. The results are explained by the appearance of conductivity via H--Iike states of impurities, which are concentrated in the vicinity of edge dislocations. [References: 20]