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V centres in plastically deformed SrS

机译:V中心在塑性变形的SrS中

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V centres of several types were studied by electron paramagnetic resonance in SrS polycrystals for the first time. Both isolated cation vacancies and their complexes with other defects are formed in SrS during plastic deformation and are further transformed by ionic processes on annealing. They become paramagnetic when the samples are irradiated by X-rays at 77 K and a hole is captured by a S2- ion situated next to a cation vacancy. Thus, V- centres arise from isolated cation vacancies V-c, V-SH from v(c)-(SH)(-) complexes, and V-2(SH)(+) from (SH)(-)-v(c)-(SH)(-) complexes. The holes captured are released 2(SH) from V centres below room temperature, within a very wide temperature range. The electric fields of dislocations are supposed to modify the activation energies of hole release. Low activation temperatures of ionic processes (compared with ionic conductivity of undamaged SrS) indicate that defects are transported by dislocations in plastically deformed SrS. [References: 18]
机译:首次通过电子顺磁共振在SrS多晶体中研究了几种类型的V中心。分离的阳离子空位及其与其他缺陷的配合物均在塑性变形过程中在SrS中形成,并在退火时通过离子过程进一步转化。当样品在77 K的X射线下照射时,它们变成顺磁性的,而一个空位被紧邻阳离子空位的S2-离子捕获。因此,V-中心来自孤立的阳离子空位Vc,v(c)-(SH)(-)络合物的V-SH,以及(SH)(-)-v(c)的V-2(SH)(+) )-(SH)(-)配合物。捕获的空穴在非常宽的温度范围内从低于室温的V中心释放2(SH)。位错的电场被认为会改变空穴释放的活化能。离子过程的活化温度低(与未损坏的SrS的离子电导率相比)表明,缺陷是通过塑性变形SrS中的位错来运输的。 [参考:18]

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