首页> 外文期刊>Physica status solidi, B. Basic research >Doping behaviors of adatoms adsorbed on phosphorene
【24h】

Doping behaviors of adatoms adsorbed on phosphorene

机译:吸附在磷上的原子的掺杂行为

获取原文
获取原文并翻译 | 示例
           

摘要

Density functional theory calculations were performed to assess the electronic structures of single-layer phosphorene upon adsorption of various adatoms. Structural relaxations showed that adatoms belonging to a particular group exhibit similar behavior. The favorable configuration for adsorption of the adatoms is mainly determined by the unsaturated lone pairs on the phosphorene surface and the valence electron configuration of the adatoms. The unsaturated lone pairs enhanced the binding energies of the adatoms, indicating that phosphorene exhibits better adsorption capability for foreign atoms than graphene. Band structure calculations demonstrated that Li and Ag adatoms act as n-type dopants with low ionization energies. Pd adatom introduced p-type impurity states, thus acting as p-type dopants for phosphorene. Furthermore, the calculated energy barriers demonstrate that adatoms diffusion on phosphorene monolayer is quite anisotropic because of the puckered structure of the pristine phosphorene. Extra biaxial strain will not significantly influence the adsorption stability of adatoms and it seems impossible for us to release these adatoms by applying strain. This approach therefore offers a potential route for tailoring the electronic properties of phosphorene via adatom functionalization and should prove helpful for evaluating the performance of phosphorene-based electronic devices. (C) 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
机译:进行密度泛函理论计算以评估吸附各种原子后单层磷的电子结构。结构弛豫表明,属于特定组的吸附原子表现出相似的行为。吸附原子的有利构型主要由磷表面上的不饱和孤对和原子的价电子构型决定。不饱和孤对增强了吸附原子的结合能,表明磷烯比石墨烯对异质原子的吸附能力更好。能带结构计算表明,Li和Ag原子是低电离能的n型掺杂物。 Pd原子引入了p型杂质态,因此充当了磷的p型掺杂剂。此外,计算出的能垒表明,由于原始磷光体的褶皱结构,磷原子在单分子层上的扩散非常各向异性。额外的双轴应变不会显着影响吸附原子的吸附稳定性,因此我们似乎不可能通过施加应变来释放这些吸附原子。因此,该方法提供了一种潜在的途径,可通过原子功能化来调节磷的电子性能,并且应证明有助于评估基于磷的电子设备的性能。 (C)2016 WILEY-VCH Verlag GmbH&Co.KGaA,魏因海姆

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号