Thin-film-growth characteristics by computer simulation: Nanostructural changes as a function of deposition conditions

摘要

A 1 + 1 dimensional computer simulation model for thin-film deposition based on the ballistic aggregation of hard disks is developed, using the classical Monte Carlo method. The growth of thin metallic (e.g., Ni) and alloy (e.g., Co-Cr) films under different deposition conditions, considering the variation of different parameters, namely, substrate temperature, angle of incidence, substrate surface roughness (including amorphous substrates), and deposition rate, on a (111) face of fee or a (100) face of hcp substrates is simulated. Results are qualitatively in good agreement with the structure zone model (SZM) predictions.