Self-assembly of carbon nanotube field-effect transistors by ac-dielectrophoresis

摘要

We report an entirely self-assembly based method for the bottom-up fabrication of carbon nanotube (CNT) field effect transistors (FETs). First, the single-walled CNTs are dispersed in water by means of single-stranded DNA. Thereafter, CNT connects are grown between adjacent metal electrodes by ac-dielectrophoresis. Finally, to obtain high-performance FETs, the metallic CNTs are eliminated by burning them through applying an intensive current while the semiconducting ones are switched off. In this way, we were able to produce multi-tube CNT-FETs with on/off ratios larger than 1000. Here we describe the preparation of the devices along with their microscopic and electrical characterization. Possible applications of the fabricated CNT-FETs are gas- or biosensors. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.