Aim To fabricate carbon nanotube field effect transitor (CNT-FET) with CNTs oriented network as the conducting channel by simply technique. Methods CNTs were purified by oxidation and acid treatment, then CNTs oriented network was formed over source and drain using high-frequency alternating current ( AC ) electropho-resis. The large direct current was applied to ablate the metallic CNTs at the depletion gate voltage. Results The back-gate CNTs oriented network FET has been fabricated, and the curve of current-voltage of CNT-FET as-fabricated was measured. Conclusion The oxidation and acid treatment improved the purity of the CNTs, and the CNTs network can be aligned by high frequency AC electrophoresis. The as-fabricated CNTs oriented network FET indicates the performance similar with silicon FET device.%目的 采用简单易行的方法,制备以碳纳米管定向网络为导电沟道的场效应晶体管.方法 采用氧化及酸处理的方法对碳纳米管进行提纯,用高频交流电泳在电极间形成碳纳米管的定向网络,并据碳纳米管的导电特性确定半导体性碳纳米管的耗尽栅压,利用大电流烧蚀法去除金属性碳纳米管.结果 制备出背栅型碳纳米管定向网络场效应晶体管,测量了输出特性.结论 经过提纯处理的碳纳米管纯度提高,碳纳米管在电极间的定向分布效果随交流电场频率的提高而改善,制备出的碳纳米管场效应晶体管具备一定的场效应特性.
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