ELECTRICAL RESISTIVITY OF THIN FILM SAMPLES OF AL-CU-FE ICOSAHEDRAL QUASICRYSTAL

摘要

A film sample of icosahedral Al-Cu-Fe alloy, produced by vacuum deposition followed by annealing, was further thinned by ion milling, and the electrical resistivity was measured for the thinned samples. In thick film samples, the resistivity behavior is the same as that of the bulk sample reported in literature, but as the thickness is reduced, the temperature dependence of the resistivity changes to that of an amorphous film, suggesting that the contact layer on the substrate is amorphous. For the sample with an estimated thickness of a few tens of nm, a log T dependence of the resistivity was observed below 20 K, which is well described by the theory of two-dimensional conduction in a weakly localized electron system. [References: 25]