Four-wave mixing measurements of biexcitons in uniaxially-strained GaN films

摘要

Biexcitons of GaN under uniaxial strain have been investigated by spectrally-resolved four-wave mixing (FWM) technique. Two kinds of biexcitons were observed clearly and the binding energies were obtained. Since the uniaxial strain changes the exciton structure, the biexciton binding is modified and biexciton has also fine structure, which was revealed in the FWM spectra that were obtained by rotating the linearly polarized excitation against the direction of uniaxial strain.