Valence and conduction band offsets of a ZrO2/SiOxNy,-Si CMOS gate stack: A combined photoemission and inverse photoemission study

摘要

The densities of states above and below the Fermi energy for the ZrO2/SiOxNy-Si system are examined by photoemission and inverse photoemission and compared with results from first principles calculations. The measured band gap of ZrO2 is 5.68 eV and the valence and conduction band offsets relative to silicon are 3.40 and 1.16 eV respectively. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.