Type-II Photoluminescence from GaP/A1P/GaP Quantum Wells under Hydrostatic Pressure

摘要

We have performed high-pressure and time-resolved photoluminescence (PL) measurements on GaP/A1P/GaP quantum wells with A1P well width of 1 to 8 monolayers at liquid helium temperature. Experimental results show that the lowest confined electron states in the A1P wells are almost pure X states, and the high efficiency of the luminescence is due to the localization of type-II excitons by fluctuations in the potential at the interface.