Electron-positron momentum density in InAsxSb1-x

摘要

Positron annihilation calculations have been performed on semiconductor alloys with the aim of studying the disorder effect on the electron momentum distribution in InAsxSb1-x. The electron wavefunctions are calculated using the pseudopotential method within the virtual-crystal approximation with and without incorporating the disorder effect as an effective potential. The calculations of the positron wavefunctions have been made in an identical manner, employing the point-core approximation for the ionic potential. The shapes of the profiles indicate that the angular correlation of positron annihilation radiation along different crystallographic directions in InAsxSb1-x is not sensitive to the disorder effect.