Evidence for existence of hydrogen-related dangling bonds in hydrogenated amorphous silicon

摘要

We have observed an electron-nuclear double resonance signal due to the 2D nucleus in sputtered deuterated amorphous Si (a-Si: D). The frequency of the signal is consistent with that estimated from the hyperfine interaction constant of a dangling bond with a 1H nucleus in hydrogenated amorphous Si (a-Si: H). This result provides further evidence for the existence of H-related (D-related) dangling bonds, that is dangling bonds having H(D) at a nearby site, in a-Si: H (a-Si: D) containing a large amount of H (D).