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The kinetic limit of superheating induced by semicoherent interfaces

机译:半相干界面引起的过热动力学极限

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The superheating behaviour of embedded particles induced by semicoherent interfaces has been observed in many circumstances. In this paper, a phenomenological model for melt nucleation on misfit dislocations at a semicoherent interface is proposed. A kinetic limit for semicoherent-interface-induced superheating, which is in good agreement with the results of experiments and computer simulations, is derived from this model. Calculations and analyses based on the model reveal that melting prefers to initiate at the semicoherent interface and that superheating of embedded particles is possible for a melt nucleation contact angle less than 90 deg. Among the matrix-dependent parameters, the contact angle and the shear modulus of the matrix are found to be dominant in determining the superheating of embedded particles.
机译:在许多情况下,都可以观察到由半相干界面引起的嵌入粒子的过热行为。本文提出了一种在半相干界面错配位错上熔核成核的现象学模型。从该模型导出了半相干界面引起的过热的动力学极限,该极限与实验和计算机模拟的结果非常吻合。基于该模型的计算和分析表明,熔融倾向于在半相干界面处引发,并且对于小于90度的熔融成核接触角,嵌入颗粒可能会过热。在与基质有关的参数中,发现基质的接触角和剪切模量在确定嵌入颗粒的过热方面起主要作用。

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