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首页> 外文期刊>Physical chemistry chemical physics: PCCP >Direct attachment of well-aligned single-walled carbon nanotube architectures to silicon (100) surfaces: a simple approach for device assembly
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Direct attachment of well-aligned single-walled carbon nanotube architectures to silicon (100) surfaces: a simple approach for device assembly

机译:将对齐良好的单壁碳纳米管架构直接附着到硅(100)表面:一种简单的设备组装方法

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摘要

A new approach for the attachment of vertically-aligned shortened carbon nanotube architectures to a silicon ( 100) substrate by chemical anchoring directly to the surface has been demonstrated for the first time. The ordered assembly of single-walled carbon nanotubes (SWCNTs) was accomplished by hydroxylating the silicon surface followed by a condensation reaction with carboxylic acid functionalised SWCNTs. This new nanostructure has been characterised by X-ray photoelectron, Raman and Fourier transform infrared (FTIR) spectroscopy as well as scanning electron and atomic force microscopy. The assembly behaviour of SWCNTs onto the silicon surface shows a fast initial step producing isolated functionalised carbon nanotubes or nanotube bundles anchored to the silicon surface followed by a slower step where the adsorbed nanotubes grow into larger aggregates via van der Waals interactions between adsorbed and solvated nanotubes. The electrochemical and optical properties of the SWCNTs directly attached to silicon have also been investigated. These new nanostructures are excellent electrochemical electrodes. They also fluoresce in the wavelength range 650-800 nm. The successful attachment of the SWCNTs directly to silicon provides a simple, new avenue for fabrication and development of silicon-based nanoelectronic, nano-optoelectronic and sensing devices. Compared to existing techniques, this new approach has several advantages including low operating temperature, low cost and the possibility of further modi. cation.
机译:首次展示了一种新方法,该方法可通过化学锚固直接将垂直排列的缩短的碳纳米管结构附着到硅(100)衬底上。通过使硅表面羟基化,然后与羧酸官能化的SWCNT进行缩合反应,可以完成单壁碳纳米管(SWCNT)的有序组装。这种新的纳米结构已通过X射线光电子,拉曼和傅立叶变换红外(FTIR)光谱以及扫描电子和原子力显微镜进行了表征。 SWCNT在硅表面上的组装行为显示出一个快速的初始步骤,即产生孤立的官能化碳纳米管或锚定在硅表面的纳米管束,然后是一个较慢的步骤,在此步骤中,吸附的纳米管通过吸附的和溶剂化的纳米管之间的范德华相互作用成长为更大的聚集体。还研究了直接附着在硅上的SWCNT的电化学和光学性质。这些新的纳米结构是出色的电化学电极。它们还在650-800 nm的波长范围内发出荧光。将SWCNT直接成功连接到硅上,为基于硅的纳米电子,纳米光电和传感设备的制造和开发提供了一条简单的新途径。与现有技术相比,这种新方法具有多个优点,包括工作温度低,成本低以及可能进行进一步修改。阳离子。

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