...
首页> 外文期刊>Physics and chemistry of minerals >Ab initio quantum-mechanical modeling of pyrophyllite [Al2Si4O10(OH)(2)] and talc [Mg3Si4O10(OH)(2)] surfaces
【24h】

Ab initio quantum-mechanical modeling of pyrophyllite [Al2Si4O10(OH)(2)] and talc [Mg3Si4O10(OH)(2)] surfaces

机译:叶蜡石[Al2Si4O10(OH)(2)]和滑石粉[Mg3Si4O10(OH)(2)]的从头算力学模型

获取原文
获取原文并翻译 | 示例

摘要

Bulk and slab geometry optimizations and calculations of the electrostatic potential at the surface of both pyrophyllite [Al2Si4O10(OH)(2)] and talc [Mg3Si4O10(OH)(2)] were performed at Hartree - Fock and DFT level. In both pyrophyllite and talc cases, a modest ( 001) surface relaxation was observed, and the surface preserves the structural features of the crystal: in the case of pyrophyllite the tetrahedral and octahedral sheets are strongly distorted with respect to the ideal hexagonal symmetry ( and basal oxygen are located at different heights along the direction normal to the basal plane), whereas the structure of talc deviates slightly from the ideal hexagonal symmetry ( almost co-planar basal oxygen). The calculated distortions are fully consistent with those experimentally observed. Although the potentials at the surface of pyrophyllite and talc are of the same order of magnitude, large topological differences were observed, which could possibly be ascribed to the differences between the surface structures of the two minerals. Negative values of the potential are located above the basal oxygen and at the center of the tetrahedral ring; above silicon the potential is always positive. The value of the potential minimum above the center of the tetrahedral ring of pyrophyllite is - 0.05 V ( at 2 angstrom from the surface), whereas in the case of talc the minimum is - 0.01 V, at 2.7 angstrom. In the case of pyrophyllite the minimum of potential above the higher basal oxygen is located at 1.1 angstrom and it has a value of - 1.25 V, whereas above the lower oxygen the value of the potential at the minimum is - 0.2 V, at 1.25 angstrom; the talc exhibits a minimum of - 0.75 V at 1.2 angstrom, above the basal oxygen.
机译:叶蜡石[Al2Si4O10(OH)(2)]和滑石粉[Mg3Si4O10(OH)(2)]的块体和平板几何形状优化以及表面静电势的计算均在Hartree-Fock和DFT级别进行。在叶蜡石和滑石的情况下,均观察到适度(001)的表面弛豫,并且表面保留了晶体的结构特征:在叶蜡石的情况下,相对于理想的六边形对称性,四面体和八面体的片材强烈变形。基底氧沿着垂直于基底平面的方向位于不同的高度),而滑石的结构则偏离理想的六角对称性(几乎共面的基底氧)。计算出的失真与实验观察到的完全一致。尽管叶蜡石和滑石表面的电势处于相同的数量级,但观察到较大的拓扑差异,这可能归因于两种矿物的表面结构之间的差异。电位的负值位于基础氧上方和四面体环的中心;在硅之上,电位始终为正。叶蜡石四面体环中心上方的电位最小值为-0.05 V(距表面2埃),而在滑石的情况下,最小值为-0.01 V(2.7埃)。在叶蜡石的情况下,较高的基础氧上方的电势最小值位于1.1埃,其值为-1.25 V,而高于较低的氧气,则最低电势值的最小值为-0.2 V,在1.25埃;在基础氧之上的1.2埃处,滑石的最小电压为-0.75V。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号