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Synthesis and characterization of thin film multiferroic

机译:薄膜多铁的合成与表征

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We have synthesized thin films of multiferroic Ni_3V_2O_8 by sputter deposition on several different substrates. X-ray diffraction and Raman spectroscopy confirm that the films are single phase Ni_3V_2O_8, with the as-deposited amorphous films developing an increasingly polycrystalline structure on annealing at 900 deg C. Films prepared on sapphire substrates have a pronounced b-axis orientation, with grain sizes approaching 10 mu m. The magnetization of the thin film samples exhibits an anomaly coincident with the transition to a canted antiferromagnetic state in bulk Ni_3V_2O_8. Preliminary dielectric investigations on these thin film samples show a subtle feature coincident with the magnetic ordering transition, which shows no dependence on bias voltage up to an electric field of 4MVm~(-1).
机译:我们已经通过溅射沉积在几种不同的基板上合成了多铁性Ni_3V_2O_8薄膜。 X射线衍射和拉曼光谱证实膜是单相Ni_3V_2O_8,沉积的非晶膜在900摄氏度的退火条件下会形成越来越多的多晶结构。在蓝宝石衬底上制备的膜具有明显的b轴取向,且晶粒尺寸接近10微米。薄膜样品的磁化表现出与块状Ni_3V_2O_8中过渡到倾斜反铁磁态的过渡相一致的异常。对这些薄膜样品的初步介电研究显示出与磁有序跃迁相吻合的细微特征,显示出直到4MVm〜(-1)的电场都与偏置电压无关。

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