Deposition of epitaxial yttria-stabilized zirconia on single-crystal Si and subsequent growth of an amorphous SiO2 interlayer

摘要

A processing technique is developed to fabricate single-crystal yttria-stabilized zirconia (YSZ) on amorphous SiO2 on (100) single-crystal Si. The YSZ layer shows high crystallinity with an ion beam channelling minimum of 11 % from Rutherford backscattering. Even though there is a thick intervening amorphous SiC>2 layer between the Si and the YSZ, the single-crystal YSZ layer is aligned with the crystal Si. The tilt and rotation variations are 0-64° and Ml0 respectively, based on X-ray diffraction co-rocking curves on [100] and cj> scans on [202] of YSZ films. The epitaxial nature of the YSZ on the thick SiO2 layer (from 10 to 100 nm) is further confirmed by high-resolution cross-sectional transmission electron microscopy analysis. This processing and the resulting multilayer structure might provide a new option for fabricating innovative microelectronic devices.