HIGH-PERFORMANCE SPIN FET USING GATE-CONTROLLED SPIN RELAXATION

摘要

Research in spintronics tli2l has led to a fruitful convergence of topics in electronics, photonics, and magnetics with the potential for new applications in semiconductor technology. I3"10' At the forefront of this effort is the quest to develop new electronic logic devices based on spin, which offer the promise of lower power operation through the incorporation of reconfigurable logic chips into devices, or lower power spin-based switching. Together with the increased flexibility in the design of spin-based logic architectures, these advantages provide a possible path to "beyond CMOS" technology, in which the management of active and leakage power dissipation is the primary roadblock to scaling of traditional devices beyond 2010.111"13! This has stimulated a considerable research effort into the spin-related properties of semiconductor materials P>3>l4-211 and the proposal of a variety of spin device concepts that have been shown to permit switching, modulation, and gain along with new functionality (principally, nonvolatility and spin-selective properties). [5~l°l However detailed assessments of the key operating metrics of spin-based devices in the context of traditional metal oxide semiconductor field-effect (MOSFET) transitors are needed.