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Contribution of the morphological grain sizes to the electrical resistivity of platinum and gold thin films

机译:形态晶粒尺寸对铂和金薄膜电阻率的贡献

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摘要

We have measured the morphological grain sizes of nanostructured platinum and gold thin films. In previous works their electrical resistivities have been measured and a theoretical approach was proposed to explain the resistivity experimental data. It will be shown that within the framework of our theoretical approach, the morphological grain sizes play an essential role in the electrical resistivity of these metallic thin films.
机译:我们已经测量了纳米结构的铂和金薄膜的形态晶粒尺寸。在以前的工作中,已经测量了它们的电阻率,并提出了一种理论方法来解释电阻率实验数据。结果表明,在我们理论方法的框架内,形态晶粒尺寸在这些金属薄膜的电阻率中起着至关重要的作用。

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