Sub-THz radiation room temperature sensitivity of long-channel silicon field effect transistors

摘要

Room temperature operating n-MOSFETs (n-type metal-oxide silicon field effect transistors) used for registration of sub-THz (sub-terahertz) radiation in the frequency range v = 53-145 GHz are considered. n-MOSFETs were manufactured by 1-pm Si CMOS technology applied to epitaxial Si-layers (d=15μm) deposited on thick Si substrates (d = 640 μm). It was shown that for transistors with the channel width to length ratio W/L = 20/3 pm without any special antennas used for radia-tion input, the noise equivalent power (NEP)for radiation frequency v=76 GHz can reach NEP ～6×110~(-10) W/Hz~(1/2).With estimated frequency dependent antenna effective area S_(ast) for contact wires considered as antennas, the estimated possible noise equivalent power NEP_(pos) for n-MOSFET structures themselves can be from ～15 to～ 10~3 times better in the specral range of v～55-78 GHz reaching NEP_(pos)～10~(-12) W/Hz~(1/2).