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Gap states of charged combined solitons in a pernigraniline-base polymer

机译:邻苯二胺基聚合物中带电结合孤子的能隙状态

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Considering the electron-electron interactions, we have investigated the electronic structures of charged combined solitons in a pernigraniline-base polymer on the basis of Baranowski-Buttner-Voit model. The numerical results show that there exist two bound states in the Peierls gap for both positive and negative combined solitons, one is deep level and the other is shallow level. The energy of the deep level (for S~+ is about 1.03 eV and S~- 0.98 eV) agree with the photoinduced absoiption data (approx 1.0eV) very well. The shallow one is newly discovered and it is about 0.22 eV under the bottom edge of the conduction band (positive soliton) or above the top edge of the valence band (negative soliton). Some other shallow states outside the energy bands are also predicted.
机译:考虑到电子与电子的相互作用,我们在Baranowski-Buttner-Voit模型的基础上研究了在邻苯二甲胺基聚合物中带电结合的孤子的电子结构。数值结果表明,在正负复合孤子的Peierls间隙中存在两个束缚态,一个是深能级,另一个是浅能级。深能级的能量(对于S〜+约为1.03 eV,S〜-0.98 eV)与光致吸收数据(约1.0eV)非常吻合。浅层是新发现的,它在导带底边缘(正孤子)下方或在价带顶边缘(负孤子)上方约为0.22 eV。还预测了能带以外的其他一些浅状态。

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