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首页> 外文期刊>Superconductor Science & Technology >Superconducting FeSe_(0.5)Te_(0.5) thin films: A morphological and structural investigation with scanning tunnelling microscopy and x-ray diffraction
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Superconducting FeSe_(0.5)Te_(0.5) thin films: A morphological and structural investigation with scanning tunnelling microscopy and x-ray diffraction

机译:FeSe_(0.5)Te_(0.5)超导薄膜:扫描隧道显微镜和x射线衍射的形态和结构研究

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摘要

We used scanning tunnelling microscopy to study the morphology of superconducting FeSe _(0.5)Te_(0.5) thin films epitaxially grown by pulsed laser deposition. Samples with critical temperature T_c above the bulk value (>16K) show large atomic terraces, and a square lattice of periodicity 3.8 associated with the Se/Te surface termination. Differences in the height coordinate of the chalcogenide atoms are clearly visible at the atomic level. On the contrary, samples with lower T_c (11K) show hillocks generated by a spiral surface growth driven by threading dislocations of screw character. A comparative x-ray diffraction analysis reveals differences of compressive strain for the two classes of specimens. Variations in the deposition rate are found to affect film growth and inner strain, which ultimately tune T_c.
机译:我们使用扫描隧道显微镜来研究通过脉冲激光沉积外延生长的超导FeSe _(0.5)Te_(0.5)薄膜的形貌。临界温度T_c高于体积值(> 16K)的样品显示出大的原子台阶,以及与Se / Te表面终止相关的周期性3.8的方格。硫族化物原子的高度坐标上的差异在原子水平上清晰可见。相反,具有较低T_c(11K)的样品显示出小丘,该小丘是由螺纹特征的螺纹错位驱动的螺旋表面生长产生的。对比X射线衍射分析揭示了两类样品的压缩应变差异。发现沉积速率的变化会影响膜的生长和内部应变,从而最终调整T_c。

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