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Thickness dependence mechanisms of the critical current density in high-T_c cuprate superconductor films

机译:高T_c铜酸盐超导体薄膜中临界电流密度的厚度依赖性机制。

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The obtained electron backscattering diffraction data and high-resolution transmission electron microscopy have shown that the nanostructure of epitaxial HTS YBCO films evolves essentially with the film thickness. This happens due to a high deposition temperature and a high dislocation mobility that induce polygonization, dislocation rearrangement and a remarkable reduction of the out-of-plane dislocation density. The analysis of experimental thickness dependences of the critical current in the framework of existing pinning models leads to the conclusion that the c-axis-correlated pinning by out-of-plane edge dislocations plays a dominant role. Thus, the evolution of the dislocation nanostructure is responsible for the critical current density reduction. Embedding of nanoparticles into HTS films should be useful only if they are coherently coupled with the matrix and extra dislocations are being formed during the film growth. The nanoparticles just preserve a high density of dislocations. Another effect is self-assembling of nanopanicles within dislocation cores forming a 'bamboo structure'. This phenomenon may result in an enlargement of the dislocation normal core and an essential increase of the elementary pinning force.
机译:所获得的电子背散射衍射数据和高分辨率透射电子显微镜表明,外延HTS YBCO薄膜的纳米结构基本上随薄膜厚度而变化。这是由于高沉积温度和高位错迁移率导致多晶化,位错重排以及面外位错密度显着降低而发生的。在现有钉扎模型框架内对临界电流的实验厚度依赖性进行的分析得出的结论是,平面外边缘错位导致的c轴相关钉扎起着主导作用。因此,位错纳米结构的演变是导致临界电流密度降低的原因。仅当纳米粒子与基质紧密结合且在薄膜生长过程中形成额外的位错时,才能将纳米粒子嵌入HTS薄膜中。纳米颗粒仅保持高密度的位错。另一个作用是在位错核心内自组装纳米颗粒,形成“竹结构”。这种现象可能导致位错法向铁心增大,并且基本钉扎力必不可少。

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