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首页> 外文期刊>Superconductor Science & Technology >Microstructures and critical currents of single-and multi-filamentary MgB_2 superconducting wires fabricated by an internal Mg diffusion process
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Microstructures and critical currents of single-and multi-filamentary MgB_2 superconducting wires fabricated by an internal Mg diffusion process

机译:内部Mg扩散工艺制备的单丝和多丝MgB_2超导线材的微观结构和临界电流

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A single-filament wire and 7-and 19-filament wires of MgB_2 superconductor were fabricated by an internal Mg diffusion (IMD) process. The wire is sheathed by a Cu-Ni alloy and each filament is composed of an outermost Ta, an intermediate B + SiC powder layer and an Mg core at the center. Despite the large total area reduction, the cross sections of all wires show uniform deformation of the composite. During the subsequent heat treatment, a reacted layer with a dense composite structure composed of a MgB_2 matrix and fine particles is formed by Mg liquid infiltration and the reaction with the B + SiC powder. For all wires, the highest transport I_c was obtained at furnace temperatures of 640-645 °C, which is just below the melting point of Mg. In the single-filament wire, a fairly large amount of B + SiC remains outside the reacted layer, while the residual B + SiC is much reduced in the multi-filamentary wires, resulting in higher I_c, than that of the single-filament wire. However, the J_c, estimated for the reacted layer is not so different between the wires. When the heat treatment temperature exceeds 650 °C, the I_c value rapidly decreases, although the volume fraction of the MgB_2 detected continues to increase. It is observed that the thickness of the reacted layer formed at higher temperatures becomes significantly inhomogeneous, which is thought to be responsible for the deterioration of transport I_c values. The highest J _c(layer) estimated for the reacted layer is as high as 9.9 × 10~4 A cm~(-2) at 4.2K and 10T and 3.3 × 10~5 A cm~(-2) at 20K and 1T achieved for the multi-filamentary wires. The J_c(core) estimated for the area including the hole and remnant B is about 1/3 of the J_c(layer). From good workability of the composite and excellent J_c values, it is expected that the IMD process can compete in terms of practical wire fabrication with the conventional powder-in-tube (PIT) process.
机译:通过内部Mg扩散(IMD)工艺制造了MgB_2超导体的单丝线和7丝线和19丝线。导线由Cu-Ni合金包裹,每根细丝由最外层的Ta,中间的B + SiC粉末层和中心的Mg芯组成。尽管总面积减小很大,但所有导线的横截面都显示出复合材料的均匀变形。在随后的热处理中,通过Mg液体渗透和与B + SiC粉末的反应,形成具有由MgB_2基体和细颗粒组成的致密复合结构的反应层。对于所有金属丝,在640-645°C的熔炉温度下获得的最高传输I_c刚好低于Mg的熔点。在单丝中,相当多的B + SiC残留在反应层外,而在多丝中残留的B + SiC则大大减少,从而导致I_c比单丝高。 。然而,对于反应层估计的J_c在导线之间并没有太大差异。当热处理温度超过650℃时,尽管检测到的MgB_2的体积分数继续增加,但是I_c值迅速降低。观察到,在较高温度下形成的反应层的厚度变得明显不均匀,这被认为是导致传输I_c值下降的原因。反应层的最高J _c(层)估计值在4.2K和10T时高达9.9×10〜4 A cm〜(-2),在20K和1T时高达3.3×10〜5 A cm〜(-2)实现了多丝线。对于包括孔和残余物B在内的区域估计的J_c(核心)约为J_c(层)的1/3。由于复合材料的良好可加工性和出色的J_c值,预计IMD工艺可以在实际的导线制造方面与传统的粉管法(PIT)竞争。

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