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Effect of SiC nanoparticle addition on the critical current density of MgB_2 tapes fabricated from MgH_2, B and MgB_2 powder mixtures

机译:SiC纳米粒子的添加对MgH_2,B和MgB_2粉末混合物制成的MgB_2带的临界电流密度的影响

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The effects of the addition of SiC nanoparticles were compared for MgB_2 tapes prepared from two different starting powders with respect to the improvement in the critical current, J_c, at 4.2 K and 10 T. The starting powder was prepared by blending premixed MgH_2 and B(MgH_2 + 2B) and premixed (MgH2 + 2B) and MgB_2 (30 percent MgB_2) in a ratio of 7:3. All tapes were fabricated by the in situ powder-in-tube method. The use of 30 percent MgB_2 as standard powder yields higher J_c values than MgH_2 + 2B in the case of the pure MgB_2 tape; however, the highest J_c (1.8 x 10~4 A cm~(-2)) was obtained for the tape from MgH_2 + 2B with 10 mol percent SiC additive. The tape from 30 percent MgB_2 contained regions with Si-free MgB_2 grains, while Si compounds were distributed homogeneously across the tape prepared from MgH_2 + 2B. Furthermore, the use of 30 percent MgB_2 instead of MgH_2 + 2B was found to reduce the effect of carbon substitution of the SiC additive. These data indicate that the technique, which enhances J_C-B characteristics of the pure MgB_2 tape, does not promise further improvement through the addition of nanosized impurity particles. It is concluded that we should improve the fabrication technique of the MgB_2 tape by keeping (or improving) the overall reactivity between the standard powder and nanosized impurity particles.
机译:比较了在两种不同的起始粉末制备的MgB_2胶带中添加SiC纳米颗粒的效果,以改善在4.2 K和10 T下的临界电流J_c。通过混合预混合的MgH_2和B( MgH_2 + 2B)和预混合(MgH2 + 2B)和MgB_2(30%MgB_2)的比例为7:3。所有胶带均采用原位粉管法制造。在纯MgB_2胶带的情况下,使用30%的MgB_2作为标准粉末会产生比MgH_2 + 2B更高的J_c值;然而,由具有10mol%SiC添加剂的MgH_2 + 2B获得的带的最高J_c(1.8×10〜4Acm〜(-2))。来自30%MgB_2的带包含无硅MgB_2晶粒的区域,而Si化合物均匀分布在由MgH_2 + 2B制成的带上。此外,发现使用30%的MgB_2代替MgH_2 + 2B可以降低SiC添加剂的碳取代作用。这些数据表明,增强纯MgB_2带的J_C-B特性的技术不能保证通过添加纳米级杂质颗粒来进一步改善。结论是,我们应该通过保持(或提高)标准粉末与纳米级杂质颗粒之间的整体反应性来改进MgB_2胶带的制造技术。

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