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Fabrication of YBa2Cu3O7 step-edge Josephson junctions for low-noise dc-SQUIDs

机译:用于低噪声dc-SQUID的YBa2Cu3O7台阶边缘约瑟夫逊结的制备

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We report the development of a fabrication process of high-resistance YBa2Cu3O7 step-edge Josephson junctions on sharp argon ion beam etched SrTiO3 substrate steps. For a reproducible fabrication, the redeposition of material at the step during the etch process has to be avoided. This is achieved by an alternating angle of ion incidence parallel to the edge of the photoresist mask. The reproducible straight step profile exhibits an angle around 60 degrees and is reflected in reproducible electrical properties of the junctions. Critical current Ic and asymptotic normal state resistance RN both Scale with the junction width w. The current-voltage (I-V) characteristics depend on the ratio of film thickness t to step height h. For t/h > 0.85 they are flux-flow-like; for t/h < 0.8 they correspond to the resistively shunted junction (RSJ) model. Lower ratios of t/h correspond to higher specific resistances resulting at 77 K typically in asymptotic normal state resistances between 5 and 10 Omega per junction, depending on w. At 77 K we achieve ICRN products Of more than 150 mu V. The junctions are applied to de superconducting quantum interference devices (dc-SQUIDs) with inductances between 25 and 35 pH. At 77 K transfer functions of more than 100 mu V Phi(0)(-1) are achieved. 1/f noise of the step-edge dc-SQUIDs is observed, but using bias current modulation it is entirely suppressed resulting in a spectral density of flux noise of 8.4 mu Phi(0) Hz(-1/2) measured at 1 Hz and 77 K for a SQUID with an inductance of 30 pH. [References: 28]
机译:我们报告了在尖锐的氩离子束刻蚀的SrTiO3衬底上的高电阻YBa2Cu3O7台阶边缘约瑟夫森结的制造工艺的发展。为了可重复制造,必须避免在蚀刻过程中的步骤中材料的再沉积。这是通过平行于光致抗蚀剂掩模边缘的交替的离子入射角实现的。可复制的直线台阶轮廓呈现约60度的角度,并反映在结的可复制电特性中。临界电流Ic和渐近正常状态电阻RN均随结宽w缩放。电流-电压(I-V)特性取决于薄膜厚度t与台阶高度h之比。当t / h> 0.85时,它们类似于通量流;当t / h <0.8时,它们对应于电阻分流结(RSJ)模型。较低的t / h比值对应于较高的电阻率,该电阻率在77 K时通常会在每个结点的5至10Ω渐近正常状态下产生电阻,取决于w。在77 K时,我们获得了超过150μV的ICRN产品。该结被应用于电感在25至35 pH范围内的超导量子干扰器件(dc-SQUID)。在77 K时,实现了超过100μV Phi(0)(-1)的传递函数。观察到了阶跃型dc-SQUID的1 / f噪声,但是使用偏置电流调制可以完全抑制它,从而导致在1 Hz下测得的通量噪声的频谱密度为8.4μPhi(0)Hz(-1/2)。对于电感为30 pH的SQUID为77K。 [参考:28]

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