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Correlation between the microwave surface resistance and the crystal structures of YBa_2Cu_3O_(7-delta) films on CeO_2-buffered sapphire

机译:CeO_2缓冲蓝宝石表面微波表面电阻与YBa_2Cu_3O_(7-delta)薄膜的晶体结构的相关性

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摘要

Dependence of the microwave surface resistance (R)_S) of YBa_2Cu_3O_(7-delta) (YBCO) films on their crystal structures was studied for YBCO films grown on as-prepared CeO_2-buffered sapphire (CbS) and CbS post-annealed at 950-1100 deg C. At temperatures below 70 K, the R_S appeared to be strongly dependent on the degree of the in-plane alignment of the YBCO films as determined by x-ray PHI-scan analysis. Optimum in-plane alignment could be observed for YBCO films on CbS post-annealed at 1000-1050 deg C, with the R5 appearing significantly smaller than for YBCO films prepared on as-grown CbS or CbS post-annealed at the other temperatures. Conversely, we observed a small correlation between the R_S and the degree of the c-axis alignment as determined using x-ray omega-scan analysis. Similarly, surface roughness of the YBCO films did not strongly influence R_S at temperatures below 70 K.
机译:研究了在制备的CeO_2缓冲蓝宝石(CbS)上生长的YBCO膜和在950退火后的CbS的YBa_2Cu_3O_(7-δ)(YBCO)膜的微波表面电阻(R)_S对其晶体结构的依赖性。 -1100℃。在低于70 K的温度下,R_S似乎强烈取决于通过X射线PHI扫描分析确定的YBCO膜的面内排列程度。在1000-1050℃后退火的CbS上,可以观察到YBCO膜的最佳面内对准,R5明显小于在其他温度下在退火后的CbS或CbS上制备的YBCO膜。相反,我们观察到R_S和使用X射线Ω扫描分析确定的c轴对齐程度之间的相关性很小。类似地,在低于70 K的温度下,YBCO膜的表面粗糙度不会强烈影响R_S。

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