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Electronic anisotropy, magnetic field-temperature phase diagram and their dependence on resistivity in c-axis oriented MgB_2 thin films

机译:c轴取向MgB_2薄膜的电子各向异性,磁场-温度相图及其与电阻率的关系

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摘要

An important predicted, but so far uncharacterized, property of the new superconductor MgB_2 is electronic anisotropy arising from its layered crystal structure. Here we report on three c-axis oriented thin films, showing that the upper critical field anisotropy ratio H_(c2)~(||)/ H_(c2)~(perpendicular) is 1.8 to 2.0, the ratio increasing with higher resistivity. Measurements of the magnetic field-temperature phase diagram show that flux pinning disappears at H≈0.8 H_(c2)~( perpendicular) (T) in untextured samples. H_(c2)~(||) (0) is strongly enhanced by alloying to 39 T for the highest resistivity film, more than twice that seen in bulk samples.
机译:新的超导体MgB_2的一个重要的预言但到目前为止尚未表征的特性是其层状晶体结构引起的电子各向异性。在这里,我们报告了三个c轴取向的薄膜,表明上临界场各向异性比H_(c2)〜(||)/ H_(c2)〜(垂直)为1.8到2.0,随着电阻率的增加,该比率增加。磁场-温度相图的测量表明,在未织构的样品中,磁通钉扎在H≈0.8H_(c2)〜(垂直)(T)时消失。 H_(c2)〜(||)(0)通过合金化至最高电阻率膜的39 T而大大增强,是批量样品中的两倍。

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