Atomic Layer Deposition of Copper Oxide using Copper(II) Acetylacetonate and Ozone

摘要

We report on the deposition of copper oxide by atomic layer deposition (ALD) using copper acetylacetonate (Cu(acac)_2) and ozone (O_3) as precursors. The aim is to deposit oxides of copper as possible candidates for materials in all-oxide photovoltaics. The present study results in ALD-type deposition of the tenorite phase of copper(II) oxide in a temperature window of 150 ℃ to ca. 230 ℃, with a growth rate of ~0.038nm per cycle. The resulting ALD characteristics, with a relatively large ALD window in deposition temperature, should be well suited for combination with additional deposition processes for the formation of complex compounds. The film thickness is studied using X-ray reflectivity (XRR), and phase is determined by X-ray diffraction (XRD). Surface roughness is studied using atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS) is used to investigate the chemical state of the deposited films.