Direct probing of semiconductor barium titanate via electrostatic force microscopy

摘要

Electrostatic force microscopy (EFM) was used to directly probe surface potential in doped barium titanate semiconducting ceramics. EFM measurements were performed using noncontact scans at a constant tip-sample separation of 75 nm with varied bias voltages applied to the sample. The applied voltage was mapped up to 10 V and the distribution of potential across the sample showed changes in regions that matched the grain boundaries, displaying a constant barrier width of 145.2 nm.