首页> 外文期刊>Spectrochimica Acta, Part B. Atomic Spectroscopy >Determination of ultra trace contaminants on silicon wafer surfaces using total-reflection X-ray fluorescence TXRF 'state-of-th-art'
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Determination of ultra trace contaminants on silicon wafer surfaces using total-reflection X-ray fluorescence TXRF 'state-of-th-art'

机译:使用全反射X射线荧光TXRF``最新技术''测定硅晶片表面上的超痕量污染物

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摘要

In a well balanced system of highly motivated, well trained personnel and automated equipment, pure reagents and bulk media, cleanrooms and integrated data management. total-reflection X-ray fluorescence (TXRF) can and must contribute to quality assurance and process stability, support and canalize creative engineering by continuous learning about materials and processes. TXRF has the advantage of controlled one-point calibration, a linear dynamic range of three orders of magnitude, high grade of automation in operation and data management, high up-time, and a simple control of data plausibility.
机译:在一个由上进,训练有素的人员和自动化设备,纯试剂和大容量介质,无尘室和集成数据管理组成的平衡良好的系统中。全反射X射线荧光(TXRF)可以而且必须有助于质量保证和过程稳定性,通过不断学习材料和过程来支持和推动创意工程。 TXRF的优势在于可控的单点校准,三个数量级的线性动态范围,操作和数据管理的高度自动化,正常运行时间长以及对数据合理性的简单控制。

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