Application of a synchrotron microprobe to the analytical characterization of ion-implanted material

摘要

A synchrotron microprobe has been used to characterize ion implantations of nickel and cobalt in silicon (100) or (111) wafers. The synchrotron radiation is collimated by means of a rigid cylindrical glass capillary of 110 mm length, 5 mm outer and 30nm or 10 fun inner diameter The beam is pointed at the wafer sample and the emitted radiation of X-rays is detected by an energy dispersive spectrometer. Line scans are recorded step by step over the implantation areas and across their borders The sharpness of the borders is characterized at a lateral resolution of 13 μm and the edge lengths ranging from 0.6 to 8 mm are determined with an accuracy better than ± 20 μm. The signal intensity and implantation dose of cobalt ranging from 1 x 10~(15) to 1x 10~(17) ions cm~(-2) show a linear relationship as is to be expected for the micrometre thin implanted layers.