PROCESSING OF NANOCRYSTALLINE DIAMOND FILMS BY MICROWAVE PLASMA CVD

摘要

Nanocrystalline diamond (NCD) films are successfully deposited on silicon (100) from methane-hydrogen-noble gas microwave plasmas. Effect of argon and methane concentration, and pulsed methane introduction on the growth rate and on the film morphology are studied. In-situ mass, spectrometry of the gaseous phase is used to identify the chemical reactants and products during the Microwave Plasma Chemical Vapor Deposition (MPCVD). These results are presented and discussed.