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First principles calculations of electronic and optical properties of Ag_2S

机译:Ag_2S电子和光学性质的第一性原理计算

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A theoretical study of structural, electronic and optical properties of Ag_2S is presented using the full potential linearized augmented plane wave (FP-LAPW) method within density functional theory (DFT). In this approach, the modified Becke Johnson (MBJ) potential coupled with Local Density Approximation (LDA) was used for the exchange-correlation potential calculation. Ground state properties are determined for the bulk material in monoclinic phase. Band structure reveals that this compound is a direct energy band gap semiconductor. MBJLDA results for the band gap of this compound are much better than those obtained using LDA, Perdew-Burke-Ernzerhof generalized gradient approximation (PBE-GGA) and Engel-Vosko's GGA (EV-GGA). A very good agreement is observed between MBJLDA band gap and corresponding experimental values as compared to other calculations. Optical constants including the dielectric function, refractive index, extinction coefficient, electron energy loss function, reflectivity and absorption coefficient are obtained and discussed.
机译:在密度泛函理论(DFT)中使用全势线性化增强平面波(FP-LAPW)方法对Ag_2S的结构,电子和光学性质进行了理论研究。在这种方法中,修改后的Becke Johnson(MBJ)势与局部密度近似(LDA)一起用于交换相关势计算。确定了单斜相中散装材料的基态性质。能带结构表明该化合物是直接能带隙半导体。该化合物带隙的MBJLDA结果比使用LDA,Perdew-Burke-Ernzerhof广义梯度逼近(PBE-GGA)和Engel-Vosko的GGA(EV-GGA)获得的结果好得多。与其他计算相比,在MBJLDA带隙和相应的实验值之间观察到非常好的一致性。得到并讨论了包括介电函数,折射率,消光系数,电子能量损失函数,反射率和吸收系数在内的光学常数。

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