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首页> 外文期刊>Solid state sciences >Optimized growth and characterization of cadmium oxalate single crystals in silica gel
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Optimized growth and characterization of cadmium oxalate single crystals in silica gel

机译:硅胶中草酸镉单晶的最佳生长和表征

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Single crystals of cadmium oxalate hydrate have been grown in silica gel in the presence of divalent Cd~(2+)ions impregnated with oxalic acid at room temperature. Gel aging technique was adopted to reduce the nucleation density and hence larger and more perfect single crystals were harvested. Obtained crystals exhibit triclinic structure with unit cell dimensions a = 6.0059 A, b = 6.66 A, c = 8.49 A, alpha = 105.71 deg, beta = 98.99 deg and gamma = 74.66 deg. IR spectrum indicates the presence of oxalate ligands and water of crystallization. Thermal behavior and stability of the grown cadmium oxalate crystals were investigated in the temperature range of 30-600 deg C. A.C. electrical conductivity of Cd(C_2O_4) centre dot 3H_2O was measured for different frequencies and was found to lie between usual conductivities of semiconductor and insulator. The activation energy required to move permanent intrinsic defects in the crystal lattice was found and was equal to 0.15 eV.
机译:草酸镉水合物的单晶已在硅胶中于室温下浸有草酸的二价Cd〜(2+)离子存在下生长。采用凝胶老化技术来降低成核密度,因此收获了更大,更完美的单晶。所获得的晶体显示三斜晶结构,其晶胞尺寸为a = 6.0059 A,b = 6.66 A,c = 8.49 A,α= 105.71度,β= 98.99度,γ= 74.66度。红外光谱表明存在草酸盐配体和结晶水。在30-600摄氏度的温度范围内研究了生长的草酸镉晶体的热行为和稳定性。在不同频率下测量了Cd(C_2O_4)中心点3H_2O的电导率,发现其位于半导体和绝缘体的常规电导率之间。发现了移动晶格中永久性固有缺陷所需的活化能,该活化能等于0.15 eV。

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