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Superconductivity in (Cu_(0.5)Tl_(0.25)Li_(0.25))Ba_2Ca_2Cu_(3-y)Si_yO_(10-δ) samples

机译:Superconductivity in (Cu_(0.5)Tl_(0.25)Li_(0.25))Ba_2Ca_2Cu_(3-y)Si_yO_(10-δ) samples

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摘要

The (Cu_(0.5)Tl_(0.25)Li_(0.25))Ba_2Ca_2Cu_(3-y)Si_yO_(10-δ)(y = 0, 0.25 0.5, 0.75, 1.0, 1.25) superconductor samples have been prepared by solid-state reaction method. The critical temperature and as well as the magnitude of diamagnetism is increased up to Si concentration y = 1.0, however, from the doping level y = 1.25 a decrease in the critical temperature along with the vanishing of the diamagnetism was observed. The carrier's in the conducting CuO_2/SiO_2 planes were optimized by carrying out post-annealing in oxygen and an increase in the critical temperature was observed in all Si doped samples. The doping efficiency of Cu_(0.5)Tl_(0.5)Ba_2O_(4-δ) charge reservoir layer in (Cu_(0.5)Tl_(0.25)Li_(0.25))Ba_2Ca_2Cu_(3-y)Si_yO_(10-δ)(y = 0, 0.25 0.5, 0.75, 1.0, 1.25) samples is enhanced by doping Li~(+1) ion; as alkali metals are known to easily loose their outer most electron which could be supplied to CuO_2/SiO_2 conducting planes and would suppress the anti-ferromagnetism in the inner conducting planes. The FTIR absorption measurements have provided an indirect evidence of Si substitution at in CuO_2 planes.
机译:(Cu_(0.5)Tl_(0.25)Li_(0.25)Ba_2Ca_2Cu_(3-y)Si_yO_(10-δ)(y = 0,0.25 0.5,0.75,1.0,1.25)超导体样品已通过固态制备反应方法。临界温度和反磁性的强度增加到Si浓度y = 1.0,但是,从掺杂水平y = 1.25可以看出,临界温度随着磁性的消失而降低。通过在氧气中进行后退火,可以优化导电CuO_2 / SiO_2平面中的载流子,并且在所有掺杂Si的样品中都可以观察到临界温度的升高。 (Cu_(0.5)Tl_(0.25)Li_(0.25))Ba_2Ca_2Cu_(3-y)Si_yO_(10-δ)(y)中的Cu_(0.5)Tl_(0.5)Ba_2O_(4-δ)电荷存储层的掺杂效率通过掺杂Li〜(+1)离子可增强= 0、0.25、0.5、0.75、1.0、1.25)的样品;因为已知碱金属容易释放其最外层电子,该电子可以提供给CuO_2 / SiO_2导电平面并抑制内部导电平面中的反铁磁性。 FTIR吸收测量提供了在CuO_2平面中Si取代的间接证据。

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