CdS thin film: Synthesis and characterization

摘要

CdS thin films have been deposited by dip technique using succinic acid as a complexing agent. The structural characterizations of films have been studied by X-ray diffraction. X-ray diffraction pattern prove crystallinity of the deposited films that crystallize in the cubic phase of CdS. The films show high absorption and band gap value which were found to be 2.58 eV. The specific conductivity of the film was found to be in the order of 10~(-7) (OMEGA cm)~(-1).