Microscale localization of low light emitting spots in reversed-biased silicon solar cells

摘要

We present the results of an investigation of the sub-micron irregularities in a monocrystalline silicon solar cell structure utilizing scanning near-field microscopy. The experiments rely on the fact that silicon solar cells under reverse bias exhibit micron-scale low light emitting centers. A novel method allowing simultaneous localization and measurement of this light on the micron-scale is presented. The method allows the characterization of these irregularities with high spatial resolution.