首页> 外文期刊>Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion >A photovoltaic light trapping estimation method for textured glass based on surface decoupling calculation
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A photovoltaic light trapping estimation method for textured glass based on surface decoupling calculation

机译:基于表面解耦计算的纹理玻璃光伏光阱估计方法

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It is desirable to be able to estimate the light trapping performance of glass in photovoltaic applications prior to depositing the active semiconductor layer onto it. However, conventional methods such as haze, root-mean-square roughness (Rms) are not very effective. Additionally, decoupling the geometries of two surfaces (surface decoupling) is known to enhance light trapping effectively. In this investigation, clear surface decoupling is observed between the inner surface in contact with an aluminium induced textured (AIT) glass surface and the exposed Si film surface grown on such glass by using cross-sectional focused ion beam (FIB) and scanning electron microscope (SEM) imaging. Results suggest that light travelling from a texture on glass to a texture on the exposed Si film surface growing from the same glass texture gets randomised to some extent depending on the decoupling degree between the two textures. The surface decoupling degree can be characterised by a calculated correlation coefficient (CC) between decoupled surfaces. The CC calculation requires the topographies of both AIT glass and the Si film grown on such glass, with the former extracted from atomic force microscopy (AFM) and the latter calculated by a self-coding model based on the underlying AIT glass topography. This CC is found to form a stronger correlation with light trapping capability of AIT glass compared to the conventional light trapping estimation methods.
机译:期望能够在将活性半导体层沉积到玻璃上之前估计光伏应用中玻璃的光捕获性能。然而,诸如雾度,均方根粗糙度(Rms)之类的常规方法不是很有效。另外,已知将两个表面的几何形状去耦(表面去耦)可以有效地增强光捕获。在这项研究中,通过使用截面聚焦离子束(FIB)和扫描电子显微镜,观察到与铝诱导纹理(AIT)玻璃表面接触的内表面与在该玻璃上生长的裸露Si膜表面之间存在清晰的表面解耦。 (SEM)成像。结果表明,从玻璃上的纹理传播到从相同玻璃纹理中生长出来的暴露的Si膜表面上的纹理的光在某种程度上是随机化的,具体取决于两种纹理之间的去耦程度。表面解耦度可以通过解耦的表面之间的计算的相关系数(CC)来表征。 CC计算需要AIT玻璃和在这种玻璃上生长的Si膜的形貌,前者是从原子力显微镜(AFM)中提取的,而后者是通过基于基础AIT玻璃形貌的自编码模型来计算的。与常规的光捕获估计方法相比,发现该CC与AIT玻璃的光捕获能力形成更强的相关性。

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