Self-aligned sub-10-nm nanogap electrode array for large-scale integration

摘要

A novel approach to creating a gap on the nanometer scale between two adjacent electrodes of the same or different metals is described. The gap size can be well controlled through sidewall coverage in a self-aligned manner and it can be tuned from 60 nm down to 5 nm with high reproducibility. This technique is fully compatible with traditional microfabrication technology and it is easily implemented to fabricate a nanogap electrode array for integration purposes. An array of short-channel single-walled carbon nanotube field-effect transistors is demonstrated. A nanometer-scale gap is created between two adjacent electrodes of the same or different metals. The gap size can be controlled from 60 nm down to 5 nm with high reproducibility through sidewall coverage in a self-aligned manner. This technique is fully compatible with microfabrication technology and can be implemented to fabricate nanogap electrode arrays for integration purposes.